Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1992-11-02
1993-09-07
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257493, 257496, 257603, H01L 2906, H01L 2988, H01L 2990
Patent
active
052431975
ABSTRACT:
The efficiency of semiconductor cathodes based on avalanche breakdown is enhanced by using ".delta.-doping" structures. The quantization effects introduced thereby decrease the effective work function. A typical cathode structure has an n-type semiconductor region and a first p-type semiconductor region, with the n-type region having a thickness of at most 4 nanometers.
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patent: 4963947 (1990-10-01), Beneking
Cooper et al., "Semiconductor Structures for Repeated Velocity Overshoot", IEEE Electron Device Letters, vol. EDL-3, No. 12, Dec. 1982.
Hoeberechts Arthur M. E.
Van De Walle Gerjan F. A.
Van Der Heide Petrus A. M.
Van Gorkom Gerardus G. P.
Van Gorkum Aart A.
Biren Steven R.
James Andrew J.
Ngo Ngan Van
U.S. Philips Corp.
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