Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1992-04-30
1994-05-24
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257190, 257184, H01L 29161
Patent
active
053151275
ABSTRACT:
A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.l-x P.sub.x, and having a first lattice constant; a second compound semiconductor layer grown with gallium arsenide, GaAs, on the first compound semiconductor layer, and having a second lattice constant different from the first lattice constant, the second compound semiconductor layer emitting the highly spin-polarized electron beam upon receiving the light energy; and a fraction, x, of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and a thickness, t, of the second compound semiconductor layer defining a magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides a residual strain, .epsilon..sub.R, of not less than 2.0.times.10.sup.-3 in the second layer. The fraction x of the gallium arsenide phosphide GaAs.sub.l-x P.sub.x and the thickness t of the second compound semiconductor layer may define the magnitude of mismatch between the first and second lattice constants, such that the magnitude of mismatch provides an energy splitting between a heavy hole band and a light hole band in the second layer so that the energy splitting is greater than a thermal noise energy in the second layer.
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Horinaka Hiromichi
Kato Toshihiro
Nakanishi Tsutmu
Saka Takashi
Daido Tokushuko Kabushiki Kaisha
Guay John
Jackson Jerome
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