Semiconductor device for driving heat generator

Incremental printing of symbolic information – Ink jet – Ejector mechanism

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257336, 347209, B41J 205

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055172245

ABSTRACT:
A semiconductor device has transistors, each transistor having a first conduction type of a first semiconductor region including a first main electrode region, a second conduction type of second semiconductor region including a channel region which is provided in the first semiconductor region, a second main electrode region provided in the second semiconductor region, a gate electrode on the channel region extending through a gate insulating film between the first and second main electrode regions. A portion of the first main electrode region which contacts the channel region is a high-resistance region. The semiconductor device also has buried-type element isolation regions which prevent the occurrence of latch up and bird's beaks in the device.

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M. Hoshi et al., "Low On-Resistance Power LDMESFET Using Double Metal Process Technology" Third International Symposium on Power Semiconductor Devices and ICS'; 22 Apr. 1991, USA, pp. 61-64.
Patent Abstracts of Japan, vol. 012, No. 489 Dec. 1988 and JP-A-63 202 971 (Toshiba).

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