Semiconductor device for display device using thin film transist

Details Semiconductor device for display device using thin film transist Semiconductor device for display device using thin film transist

1995-01-23

1998-01-13

Niebling, John

Fishing, trapping, and vermin destroying

437 41, 437233, H01L 2184, H01L 21265

Patent

active

057078823

ABSTRACT:
A method of manufacturing a polycrystalline silicon film having a particular field effect mobility is disclosed. A first polycrystalline silicon film is formed on a transparent insulation substrate. The surface of the silicon film is oxidized, and an amorphous silicon film is formed on the first polycrystalline silicon film and oxide layer. The amorphous silicon film is subjected to a solid phase growth process to be converted to a second polycrystalline silicon film. The field effect mobility of the second polycrystalline silicon film can be adjusted to a desired value by controlling the relative thicknesses of the first and second polycrystalline silicon films.

REFERENCES:
patent: 5341012 (1994-08-01), Misawa et al.
patent: 5366909 (1994-11-01), Song et al.
patent: 5403755 (1995-04-01), Chae
patent: 5512494 (1996-04-01), Tanabe
patent: 5523240 (1996-06-01), Zhang et al.

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