Semiconductor device for detecting radiation

Details Semiconductor device for detecting radiation Semiconductor device for detecting radiation

1987-10-01

1989-05-30

James, Andrew J.

Radiant energy

Ionic separation or analysis

Static field-type ion path-bending selecting means

357 30, 357 52, 250270, H01L 2714

Patent

active

048355879

ABSTRACT:
A semiconductor device for detecting gamma radiation displaying superior linearity of response to radiation without showing any energy dependency even if the gamma rays have the high energy is formed using an annular depletion region surrounded by non-depletion regions. The size of the regions is selected so that the distance from the edge of the depletion to the most distant point of the non-depletion region is at least about equal to the mean range of the highest energy gamma ray to be measured.

REFERENCES:
patent: 3472711 (1969-10-01), Chow
patent: 3601668 (1971-08-01), Slaten
patent: 3646527 (1972-02-01), Wada et al.
patent: 3812518 (1974-05-01), Kurz et al.
patent: 4090213 (1978-05-01), Maserijian
patent: 4160985 (1979-07-01), Kamins et al.
patent: 4343962 (1982-08-01), Neugroschel
patent: 4524376 (1982-05-01), Cornick

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