Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1993-08-11
1995-01-10
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 94, 257 13, 257184, H01L 29205, H01L 310304
Patent
active
053810236
ABSTRACT:
In a ridge type or buried hetero type waveguide structure, a semiconductor layer functioning as one selected from a guiding layer, an absorption layer and an active layer includes InGaAsP mixed crystal, and semiconductor cladding layers include InGaAsP mixed crystal having a bandgap energy larger than that of the InGaAsP crystal layer included in the semiconductor layer functioning as one selected therefrom.
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patent: 5181086 (1993-01-01), Yoshida
patent: 5202285 (1993-04-01), Sugano et al.
Proceedings of the 1991 IEICE Fall Conference. pp. 4-162, (in Japanese).
"Electronics Letters", Nov. 5th, 1987, vol. 23, No. 23, pp. 1232 to 1234.
Hardy David B.
Limanek Robert P.
NEC Corporation
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