Semiconductor device for control of a signal light

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...

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257 94, 257 13, 257184, H01L 29205, H01L 310304

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active

053810236

ABSTRACT:
In a ridge type or buried hetero type waveguide structure, a semiconductor layer functioning as one selected from a guiding layer, an absorption layer and an active layer includes InGaAsP mixed crystal, and semiconductor cladding layers include InGaAsP mixed crystal having a bandgap energy larger than that of the InGaAsP crystal layer included in the semiconductor layer functioning as one selected therefrom.

REFERENCES:
patent: 4538342 (1985-09-01), Camlibel et al.
patent: 4575919 (1986-03-01), Logan et al.
patent: 4835788 (1989-05-01), Yamaguchi
patent: 5181086 (1993-01-01), Yoshida
patent: 5202285 (1993-04-01), Sugano et al.
Proceedings of the 1991 IEICE Fall Conference. pp. 4-162, (in Japanese).
"Electronics Letters", Nov. 5th, 1987, vol. 23, No. 23, pp. 1232 to 1234.

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