Semiconductor device for charge-up damage evaluation and...

Details Semiconductor device for charge-up damage evaluation and... Semiconductor device for charge-up damage evaluation and...

2005-09-13

2005-09-13

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S532000

Reexamination Certificate

active

06943427

ABSTRACT:
A semiconductor device for charge-up damage evaluation and an evaluation method for the same are provided which permit to detect charge-up damage caused by static electricity. There are provided a silicon substrate9, a first insulation film10formed on the silicon substrate9, a first conductive layer6formed on the first insulation film10and connected to the silicon substrate9, a second insulation film11formed on the first conductive layer6, a second conductive layer8formed on the second insulation film11and serving as an antenna, and a third insulation film12formed on the second conductive layer8.

REFERENCES:
patent: 2002/0000579 (2002-01-01), Aoyama
patent: 2002/0179249 (2002-12-01), Morimoto
patent: 2003/0077883 (2003-04-01), Ohtake
patent: 08203971 (1996-08-01), None

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