Semiconductor device for charge transfer device

Details Semiconductor device for charge transfer device Semiconductor device for charge transfer device

1992-01-10

1993-06-29

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257216, 257222, 257232, 257233, 257249, H01L 2978, H01L 2714, H01L 3100

Patent

active

052237265

ABSTRACT:
In a CCD device, a plurality of trench holes are formed in high resistivity semiconductor layer and juxtaposed in a charge transfer direction, and charge transfer electrodes are buried in the trench holes. Charge transfer regions are formed in the semiconductor layer around the vicinity of the respective trench holes during a main operating state.

REFERENCES:
patent: 3848328 (1974-11-01), Ando et al.
patent: 4760273 (1988-07-01), Kimata
patent: 4884142 (1989-11-01), Suzuki
patent: 4926225 (1990-05-01), Hosack
"Charge Transfer Devices"; Carlo H. Sequin et al.; pp. 6-18; 42-47; 152-157.
"Trench CCD Image Sensor"; Takahiro Yamada et al.; pp. 1-8.
IEEE 1989 International Conference on Consumer Electronics, Rosement, Ill., 6th-9th Jun. 1989, pp. 176-177, New York, U.S.; T. Yamada et al.: "Trench CCD image sensor for high resolution cameras".

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