Semiconductor device fabrication with disordering elements intro

Details Semiconductor device fabrication with disordering elements intro Semiconductor device fabrication with disordering elements intro

1982-04-22

1985-04-16

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 148175, 357 16, 357 17, 357 91, 372 45, H01L 21263, H01L 3310

Patent

active

045114080

ABSTRACT:
Silicon or krypton is used as a disordering element to selectively disorder layers in a heterojunction III-V semiconductor.

REFERENCES:
patent: 3702975 (1972-11-01), Miller et al.
patent: 4132960 (1979-01-01), Streifer et al.
patent: 4194935 (1980-03-01), Dingle et al.
patent: 4251298 (1981-02-01), Thompson
patent: 4341570 (1982-07-01), Landeau et al.
patent: 4360919 (1982-11-01), Fuziwara et al.

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