Semiconductor device fabrication method for preventing tungsten

Details Semiconductor device fabrication method for preventing tungsten Semiconductor device fabrication method for preventing tungsten

1997-07-24

1998-12-22

Talbot, Brian K.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 99, 427124, 438656, 438913, B05D 512

Patent

active

058515810

ABSTRACT:
A contact is formed in an insulating film covering on a silicon substrate and thereafter an amorphous silicon film is deposited thereon at 400.degree. to 500.degree. C. by using disilane. A tungsten film is then formed and etched back to form a tungsten plug through etch-back.

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