Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-04-24
2007-04-24
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S716000, C438S715000, C438S717000, C438S718000, C216S047000, C430S316000, C257S637000
Reexamination Certificate
active
10107298
ABSTRACT:
A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask pattern (6) is thereby formed. Thereby a resist pattern (7), over a non-selected region (6b), having an opening (7a) through which a selection region (6a) in the mask pattern is exposed is formed. Only the mask pattern (6a) exposed through the opening (7a) is slimmed by performing a selection etching, the work film (3) is etched by using the mask pattern (6). A work film pattern (8) is thereby formed, which include a wide pattern section (8a) of a dimension width of the limitation of the exposure resolution and a slimmed pattern section (8a) of a dimension that is not more than the limitation of the exposure resolution.
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Notification of Reasons for Refusal issued by the Japanese Patent Office dated Apr. 18, 2006, for Japanese Patent Application No. 2001-123633, and English-language translation thereof.
Hashimoto Koji
Inoue Soichi
Takahata Kazuhiro
Yoshikawa Kei
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Rao Shrinivas H.
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