Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2005-10-28
2008-09-23
Smith, Matthew S. (Department: 2823)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S016000, C438S513000, C438S514000, C438S788000, C438S792000, C257SE21530
Reexamination Certificate
active
07427518
ABSTRACT:
According to the present invention, there is provided a semiconductor device fabrication method comprising:measuring light emission intensity of at least one type of wavelength contained in light emitted from a plasma, when one of nitriding, oxidation, and impurity doping is to be performed on a surface of a semiconductor substrate in a processing vessel by using the plasma;calculating, for each semiconductor substrate, an exposure time during which the semiconductor substrate is exposed to the plasma, on the basis of the measured light emission intensity; andexposing each semiconductor substrate to the plasma on the basis of the calculated exposure time, thereby performing one of the nitriding, oxidation, and impurity doping.
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Eguchi Kazuhiro
Inumiya Seiji
Kaneko Akio
Sato Motoyuki
Sekine Katsuyuki
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Smith Matthew S.
Stark Jarrett J
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