Semiconductor device fabrication method and fabrication...

Details Semiconductor device fabrication method and fabrication... Semiconductor device fabrication method and fabrication...

2008-05-13

2008-05-13

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C257SE21210, C257SE21220, C438S747000

Reexamination Certificate

active

07371694

ABSTRACT:
The flatness of the surface of a Si substrate is requested as the present gate length is miniaturized. The present invention is a semiconductor device fabrication method for flattening a silicon surface by continuously supplying a high-temperature fluoride ammonium solution to the surface a silicon substrate in which at least the silicon surface is locally exposed.

REFERENCES:
patent: 2002/0036006 (2002-03-01), Ueda et al.
patent: 2003/0121538 (2003-07-01), Zahorik et al.
patent: 2004/0069329 (2004-04-01), de Larios et al.
patent: 2005/0000545 (2005-01-01), Inagaki
patent: 51-096288 (1976-08-01), None
patent: 4-306836 (1992-10-01), None
patent: 5-267260 (1993-10-01), None
patent: 8-013165 (1996-01-01), None
patent: 8-13165 (1996-01-01), None
patent: 11-135464 (1999-05-01), None
patent: 11-251270 (1999-09-01), None
patent: 2002-43274 (2002-02-01), None
patent: 2003-224096 (2003-08-01), None
Taniguchi et al., “The Terminal Hydrogen Structure of Si(100) Surfaces Processed by NH4F Heating,”Extended Abstracts: The 49thSpring Meeting of the Japan Society of Applied Physics and Related Societies, Mar. 2002, p. 803.
Okamura et al., “Formation of Flat Si (100) Surfaces at the Atomic Level by Means of NH4F Aqueous Solutions,”Extended Abstracts: The 50thSpring Meeting of the Japan Society of Applied Physics and Related Societies, Mar. 2003, p. 853.

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