Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-07-12
2011-07-12
Rosasco, Stephen (Department: 1721)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492230
Reexamination Certificate
active
07977653
ABSTRACT:
A semiconductor device fabrication method includes preparing a substrate having a first circuit pattern of a semiconductor device; providing a mask with at least part of second circuit pattern of the semiconductor device; collimating incident direction of particles; changing at least one of the a substrate angle between a vertical axis of the substrate and the incident direction of the particles and a mask angle between a vertical axis of the mask and the incident direction so that the second circuit pattern on the mask can be aligned to the first circuit pattern on the substrate with a design margin; and selectively irradiating the particles to the substrate using the mask.
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Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Rosasco Stephen
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