Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2011-05-31

2011-05-31

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000

Reexamination Certificate

active

07951715

ABSTRACT:
The method comprises the step polishing the surface of a film-to-be-polished formed over a semiconductor substrate10with a polishing pad while a polishing slurry containing abrasive grains, and an additive of a surfactant is being supplied onto the polishing pad104to thereby planarize the surface of the film-to-be-polished, and the step of further polishing the surface of the film-to-be-polished with the polishing pad while the polishing slurry and water are being supplied onto the polishing pad, after the surface of the film-to-be-polished has been planarized. In the finishing polish, not only deionized water but also the polishing slurry are supplied on to the polishing pad, a position for the polishing slurry to be supplied to and a position for the deionized water to be supplied to are suitably set, and a ratio of a supply amount of the polishing slurry and a supply amount of the deionized water is suitably set, whereby the intra-plane film thickness of the film-to-be-polished as finish-polished can be uniform.

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