Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2007-05-18

2009-10-06

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

07598151

ABSTRACT:
According to the present invention, there is provided a semiconductor device fabrication method having:coating a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film;forming a polysilazane film by volatilizing the solvent by heat-treating the coating film; andinserting the semiconductor substrate into a predetermined furnace, lowering a pressure in the furnace, and oxidizing the polysilazane film while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.

REFERENCES:
patent: 4952524 (1990-08-01), Lee et al.
patent: 6191002 (2001-02-01), Koyanagi
patent: 6372569 (2002-04-01), Lee et al.
patent: 6566229 (2003-05-01), Hong et al.
patent: 6767641 (2004-07-01), Shimizu et al.
patent: 6919636 (2005-07-01), Ryan
patent: 7071107 (2006-07-01), Hieda et al.
patent: 7074690 (2006-07-01), Gauri et al.
patent: 7238587 (2007-07-01), Hoshi et al.
patent: 2004/0022528 (2004-02-01), Yoo et al.
patent: 2004/0072429 (2004-04-01), Hieda et al.
patent: 2004/0248374 (2004-12-01), Belyansky et al.
patent: 2005/0026443 (2005-02-01), Goo et al.
patent: 11-307626 (1999-11-01), None
patent: 2000-58646 (2000-02-01), None
patent: 2002-367980 (2002-12-01), None
patent: 2004-179614 (2004-06-01), None
patent: 2004-343087 (2004-12-01), None
patent: 531833 (2003-05-01), None
Notification of Examination Opinions issued by the Taiwanese Patent Office on Jun. 20, 2008, for Taiwanese Patent Application No. 095104377, and English-language translation thereof.

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