Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2006-02-21

2008-09-02

Goudreau, George A. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S704000, C438S705000, C438S714000, C438S734000, C438S749000, C134S001200, C134S001300

Reexamination Certificate

active

07419914

ABSTRACT:
A method for fabricating a semiconductor device with a borderless via/wiring structure includes the steps of performing borderless via etching using a resist mask to form a contact hole in an interlevel dielectric layer over a semiconductor substrate so as to expose two different metal materials of lower layer patterns in the contact hole; andperforming plasma irradiation using an H2O-containing gas prior to a wet process when removing the resist mask.

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Office Action dated Mar. 20, 2007 issued in corresponding Korean Application No. 10-2006-0020423.

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