Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2005-06-16

2008-01-01

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S745000, C430S312000, C430S314000

Reexamination Certificate

active

07314834

ABSTRACT:
A semiconductor device fabrication method applies a diazo novolac photoresist to a semiconductor wafer, followed by light exposure of its entire surface to form an underlying resist layer; forms a surface resist layer thereover; performs patterned-light exposure and heat treatment to the photoresist film consisting of the two resist layers formed; and exposes its entire surface to light, followed by development to process the photoresist film into a resist pattern, where the surface resist layer is in an inverse tapered shape, while the underlying resist layer is in an undercut shape relative to the surface resist layer.

REFERENCES:
patent: 4224361 (1980-09-01), Romankiw
patent: 5120622 (1992-06-01), Hanrahan
patent: 5432125 (1995-07-01), Misawa et al.
patent: 7008883 (2006-03-01), Kashiwagi et al.
patent: 3339331 (2002-08-01), None

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