Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2007-07-03

2007-07-03

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C257SE21546

Reexamination Certificate

active

11167233

ABSTRACT:
According to the present invention, there is provided a semiconductor device fabrication method that coats a semiconductor substrate with a silazane perhydride polymer solution prepared by dispersing a silazane perhydride polymer in a solvent containing carbon, thereby forming a coating film. A polysilazane film is formed by volatilizing the solvent by heat-treating the coating film. The semiconductor substrate is inserted into a predetermined furnace, where the pressure in the furnace is lowered. The polysilazane film is oxidized while the pressure in the furnace is raised by supplying steam into the furnace, thereby forming a silicon oxide film.

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