Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2006-04-18

2006-04-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000

Reexamination Certificate

active

07030019

ABSTRACT:
A semiconductor device fabrication method according to the invention comprises the steps of: (1) exposing a silicon layer by removing a portion of an insulating layer above a projected part of the silicon layer, the insulating layer covering the silicon layer; and (2) chemically and mechanically polishing the exposed silicon layer with a polishing slurry for the silicon layer while protecting the silicon layer with the remaining of the insulating layer.

REFERENCES:
patent: 2002/0034848 (2002-03-01), Park
patent: 2004/0002209 (2004-01-01), Lee et al.
patent: 2004/0014321 (2004-01-01), Kwon et al.
patent: 2004/0154231 (2004-08-01), Lee et al.

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