Semiconductor device fabrication method

Details Semiconductor device fabrication method Semiconductor device fabrication method

2006-04-18

2006-04-18

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C510S175000, C134S001100

Reexamination Certificate

active

07030026

ABSTRACT:
The semiconductor device fabrication method comprises the step of forming electrodes20in a first element region14nand in a second element region14p; the step of forming a first resist film22which is opened in the first element region14n; the step of forming a first dopant diffused region28with the first resist film22and the gate electrode20as a mask; the first ashing processing step of ashing the first resist film22; the step of forming a sidewall insulation film42over the side wall of the gate electrode20; the step of forming a second resist film44which is opened in the first element region14n; the forming a second dopant diffused region48with the second resist film44, the gate electrode20and the sidewall insulation film42as a mask; and the second ashing processing step for ashing the second resist film44. The ashing processing period of time in the first ashing processing step is shorter than the ashing processing period of time in the second ashing processing step.

REFERENCES:
patent: 5770494 (1998-06-01), Yamamoto et al.
patent: 5830788 (1998-11-01), Hiroki et al.
patent: 6031268 (2000-02-01), Hiroki et al.
patent: 6083780 (2000-07-01), Yasuda
patent: 6255152 (2001-07-01), Chen
patent: 6479350 (2002-11-01), Ling et al.
patent: 6677194 (2004-01-01), Yamanaka et al.
patent: 6872624 (2005-03-01), Odake et al.
patent: 6897118 (2005-05-01), Poon et al.
patent: 6-204243 (1994-07-01), None
patent: 6-209081 (1994-07-01), None

Affiliated with

Also associated with

Rating

Semiconductor device fabrication method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device fabrication method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device fabrication method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3563730