Semiconductor device fabrication

Details Semiconductor device fabrication Semiconductor device fabrication

1989-01-03

1993-12-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437913, 148DIG82, H01L 21265

Patent

active

052702359

ABSTRACT:
In the fabrication of an MIS transistor, the distribution characteristic of the impurity density with respect to the depth of the first region exhibited when the amount of ions implanted for channel doping is varied is first determined. The swing value is calculated from the gate voltage - drain current characteristic on the basis of the distribution characteristic obtained. Ions are implanted to the channel portion at a dose which is selected in accordance with the impurity density of the first region so that the swing value takes the minimum value or a value as small as possible, thereby producing an MIS type semiconductor device having a channel doping structure in a first region between a source and a drain.

REFERENCES:
patent: 4112455 (1978-09-01), Seliger et al.
patent: 4514893 (1985-05-01), Kinsbron et al.
"Improved Short-Channel Characteristics in Boron-Implanted N-Channel MOSFETs", Gel Journal of Research, A. G. Lewis, et al., vol. 1 (1983), No. 3, pp. 157-173.
"Device Design Considerations for Ion Implanted n-Channel MOSFETs", Ion Implanted Mosfets, V. L. Rideout, et al., pp. 50-59.
Sze, S. M., Physics of Semiconductor Devices, Wiley-Interscience Publication, John Wiley & Sons, 1981, pp. 446-475.
Troutman, "Subthreshold slope for Insulated gate Field Effect Transistors", IEEE Trans. Elec. Devs., Nov. 1975, pp. 1049-1051.
Brews, "Subthreshold Behavior of Uniformly and Nonuniformly Doped Long-channel MOSFET", IEEE Trans. Elec. Devs., vol. 26, No. 9, Sep. 1979 pp. 1282-1291.
Schmitz et al., "Design, Modeling, and Fabrication of Subhalf-Micrometer CMOS Transistors", IEEE Trans. Elec. Devs., vol. Ed 33, No. 1 Jan. 1986, pp. 148-153.

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