Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1982-02-12
1983-04-05
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29580, 29591, 148178, H01L 2124
Patent
active
043790054
ABSTRACT:
Semiconductor devices can be fabricated using as an intermediate manufacturing structure a substrate of one semiconductor with a thin epitaxial surface layer of a different semiconductor with properties such that the semiconductors each have different solubilities with respect to a metal. When a vertical differentiation is used to expose the different materials and the metal is deposited on both and heated, the metal will form a Schottky barrier in one material and an ohmic contact in the other. Where the substrate is gallium arsenide and the epitaxial layer is gallium aluminum arsenide and the metal is tin, a self-aligned gallium arsenide MESFET is formed wherein the tin forms ohmic contacts with the gallium arsenide and a Schottky barrier contact with the gallium aluminum arsenide.
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Hovel Harold J.
Woodall Jerry M.
International Business Machines - Corporation
Ozaki G.
Riddles Alvin J.
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