Semiconductor device, fabricating method thereof and flash contr

Details Semiconductor device, fabricating method thereof and flash contr Semiconductor device, fabricating method thereof and flash contr

1991-03-01

1992-09-29

Davie, James W.

357 43, H01L 2978

Patent

active

051517620

ABSTRACT:
The semiconductor device is composed of a thyristor and a MOSFET (801) cascode-connected. The thyristor includes a bipolar transistor (803) cascode-connected with the MOSFET (801), the base (p.sup.-- semiconductor region (704)) of which is adapted to be punched through by the application of a working voltage. Thus, the thyristor can easily be latched and unlatched in response to the turn-on and turn-off of the MOSFET (801). Thus the semiconductor device can be securely on/off controlled only by the single gate (G) of the MOSFET. By using such semiconductor device as a switching element (910) in a flash control device, a high performance flash control device with high flashing efficiency can be implemented.

REFERENCES:
patent: 5053838 (1991-10-01), Fujihira

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