Semiconductor device fabricating method and treating liquid

Details Semiconductor device fabricating method and treating liquid Semiconductor device fabricating method and treating liquid

2005-05-10

2005-05-10

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S700000, C438S725000, C438S738000

Reexamination Certificate

active

06890864

ABSTRACT:
There are provided a semiconductor device fabricating method for forming a wiring layer on a semiconductor substrate, followed by cleaning, which may prevent elution and oxidation of the wiring layer, and a treating liquid used in the fabricating method. A Cu wiring, an interlayer film over the Cu wiring and an opening in the interlyaer film to expose the surface of the Cu wiring are formed in a plasma atmosphere. IPA is sprayed to the semiconductor device, and then, an organic release process is performed thereto with an amine solvent to remove an etching residue. The semiconductor device is rinsed with the IPA again to remove the remaining amine, and then is cleaned with a treating liquid, which is alkalescent. Then, it is rinsed with pure water or CO2water and is dried.

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