Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1996-09-27
1998-09-22
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 27, 257192, 257328, 257329, 257270, H01L 2906, H01L 310328, H01L 310336, H01L 31109
Patent
active
058118314
ABSTRACT:
A semiconductor device exploiting a quantum interference effect is disclosed. The device comprises: a semiconductor body; n-1 (n.gtoreq.3) rods of forbidden regions extending along one direction, the forbidden regions being rotationally asymmetric around the one direction and being changeable in cross sectional area; a channel region consisting of a plurality of elemental channel regions, the forbidden regions dividing the channel region into the plurality of elemental channel regions, each of the elemental channel regions forming a closed circuit and being defined around each of the forbidden regions, the channel region being multiply connected with connectivity of n; and source and drain electrodes electrically connected to one and another ends of the channel region along the one direction.
REFERENCES:
patent: 4581621 (1986-04-01), Reed
patent: 4916499 (1990-04-01), Kawai
Onda et al. "Striped Channel Field Effect Transistor With Modulation Doped Structure," IEDM, 1989, pp. 125-128.
Fahmy Wael
Sony Corporation
Weiss Howard
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