Active solid-state devices (e.g. – transistors – solid-state diode – Point contact device
Patent
1992-07-09
1995-04-25
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Point contact device
257 2, 257390, 257401, H01L 2138, H01L 21425
Patent
active
054101611
ABSTRACT:
Dummy transistors (each composed of a dummy gate electrode and n.sup.+ -diffused layers) are disposed adjacent to a transistor for characteristic checking which is composed of a gate electrode, n.sup.+ -diffused layers and aluminum interconnection layers. They are arranged in the same density as that of regular transistors in a product. This decreases a difference in size between the characteristic checking transistor and that in the regular transistors in the product so that the former can be truly representative of the latter.
REFERENCES:
patent: 4608748 (1986-09-01), Noguchi et al.
Abraham Fetsum
NEC Corporation
Sikes William L.
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