Semiconductor device epitaxial layer lateral growth rate control

Details Semiconductor device epitaxial layer lateral growth rate control Semiconductor device epitaxial layer lateral growth rate control

1996-07-22

1999-02-02

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117104, 117913, 117923, 117937, 117940, 117954, 117 92, C30B 100

Patent

active

058658882

ABSTRACT:
A semiconductor device epitaxial layer lateral growth rate control method using CBr.sub.4 gas involves regulating an epitaxial layer lateral growth rate in accordance with the CBr.sub.4 amount doped into the epitaxial layer during the epitaxial layer growth occurring on a patterned GaAs substrate by means of a metalorganic chemical vapor deposition (MOCVD) process. The lateral growth rate may be regulated by varying the growth temperature and the V/III doping ratio.

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patent: 5168077 (1992-12-01), Ashizawa
patent: 5498568 (1996-03-01), Hosoba
patent: 5656538 (1997-08-01), Gardner
"MOCVD Growth of AlGaAs/GaAs Structures on Nonplanar Substrates: Evidence for Lateral Gas Phase Diffusion," by K.M. Dzurko, Journal of Electronic Materials, vol. 19, No. 12, 1990.
"Growth Behavior During Nonplanar Metalorganic Vapor Phase Epitaxy," by P.Demeester et al., American Institute of Physics, Apr. 1988.
"Atmospheric Pressure MOCVD Growth of GaAs and AlGaAs on Structured Substrates," by K.M. Dzurko et al., Inst. Phys. Conf. Ser. No. 96; Chapter 3.
"A Study of the Orientation Dependence of Ga(Al)As Growth by MOVPE," by S.D. Hersee et al., Journal of Crystal Growth 77 1986.
"The Fabrication of Quantum Wire Structures Through Application of CCL.sub.4 Towards Lateral Growth Rate Control of GaAs on Patterned GaAs Substrates," by Yong Kim et al., Appl. Phys. Lett. 67 Sep. 25, 1995.
"Facet Evolution of CCl.sub.4 -doped Al.sub.0.5 Ga.sub.0.5 As/GaAs Multilayers During Metalorganic Chemical Vapor Deposition on Patterned GaAs Substrates," Yong Kim et al., Journal of Crystal Growth 156 1995.

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