Semiconductor device enhanced for optical interaction

Details Semiconductor device enhanced for optical interaction Semiconductor device enhanced for optical interaction

1988-06-07

1992-09-22

James, Andrew J.

357 231, H01L 2714, H01L 3100, H01L 2701, H01L 2900

Patent

active

051501821

ABSTRACT:
A semiconductor device is disclosed in which a long interaction path length is provided for a non-invasive probe beam. In a preferred embodiment, mirror surfaces are etched in the surface of the semiconductor substrate which are used to reflect the probe beam along the longest dimension of a charge carrier region of the semiconductor device. Interaction between the probe beam and the charge carriers present in the region is thereby enhanced.

REFERENCES:
patent: 3210622 (1965-10-01), Gradus
"Electrooptic Sampling in GaAs Integrated Circuits" by Kolner et al, IEEE Journal of Quantum Electronics, vol. QE-22, No. 1, Jan. 1986.
"Noninvasive Sheet Charge Density Probe for Integrated Silicon Devices", by Heinrich et al., Applied Physics Letter 48(16), Apr. 1986.

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