Semiconductor device employing silicon nitride layers with varie

Details Semiconductor device employing silicon nitride layers with varie Semiconductor device employing silicon nitride layers with varie

1998-01-29

2000-10-24

Picard, Leo P.

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

257 72, 438761, 148DIG114, H01L 21318

Patent

active

061371564

ABSTRACT:
On a TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si--H bonds is reduced.

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