Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2007-08-22
2011-10-25
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257SE27014
Reexamination Certificate
active
08044434
ABSTRACT:
The semiconductor device includes a P-type group III-V nitride semiconductor layer, an N-type group III-V nitride semiconductor layer, and an electrode in contact with both of the P-type group III-V nitride semiconductor layer and the N-type group III-V nitride semiconductor layer. The electrode includes a first electrode portion made of a first conductive material, and a second electrode portion, made of a second conductive material different from the first conductive material, bonded to the first electrode portion. The first electrode portion is in contact with the P-type group III-V nitride semiconductor layer, and the second electrode portion is in contact with the N-type group III-V nitride semiconductor layer.
REFERENCES:
patent: 6897495 (2005-05-01), Yoshida et al.
patent: 7211839 (2007-05-01), Kachi et al.
patent: 7439555 (2008-10-01), Beach et al.
patent: 2001/0040246 (2001-11-01), Ishii
patent: 2005/0127394 (2005-06-01), Nagahama et al.
patent: 2008/0274621 (2008-11-01), Beach et al.
patent: 04-093038 (1992-03-01), None
patent: 2000-012846 (2000-01-01), None
patent: 2000-091253 (2000-03-01), None
patent: 2003-163354 (2003-06-01), None
patent: 2004-260140 (2004-09-01), None
patent: 2005-175276 (2005-06-01), None
patent: 2005-203753 (2005-07-01), None
Baker, T.J. et al., Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates, Jpn J Appl Phys Part 2, 2006, vol. 45, No. 4-7, pp. L154-L157.
Satoshi Okubo, “Not Only Shining Any Longer GaN Behind Evolution of Devices”, Jun. 5, 2006, Nikkei Electronics, pp. 51-60, which is described on page 2 of English specification.
Ohta Hiroaki
Takasu Hidemi
Dickey Thomas L
Rabin & Berdo PC
Rohm & Co., Ltd.
LandOfFree
Semiconductor device employing group III-V nitride... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device employing group III-V nitride..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device employing group III-V nitride... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4282427