Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-02
2011-08-02
Clark, S. V (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000
Reexamination Certificate
active
07989955
ABSTRACT:
A semiconductor device includes a first insulating film that includes a first opening reaching a substrate and that is provided on the substrate, a second insulating film that includes a second opening reaching the substrate through the first opening of the first insulating film and that covers the first insulating film, and a conductive pattern that is provided on the second insulating film so as to be in contact with the substrate through the second opening of the second insulating film.
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Christos D. Dimitrakopoulos and Patrick R. L. Malenfant; Organic Thin Film Transistors for Large Area Electronics; Advanced Materials; vol. 14, No. 2; 2002; p. 99-117.
Japanese Office Action issued on Apr. 28, 2009 corresponding to JP Patent Application No. 2007-116372.
Clark S. V
SNR Denton US LLP
Sony Corporation
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