Semiconductor device, electronic device, and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S750000

Reexamination Certificate

active

07989955

ABSTRACT:
A semiconductor device includes a first insulating film that includes a first opening reaching a substrate and that is provided on the substrate, a second insulating film that includes a second opening reaching the substrate through the first opening of the first insulating film and that covers the first insulating film, and a conductive pattern that is provided on the second insulating film so as to be in contact with the substrate through the second opening of the second insulating film.

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patent: 5847460 (1998-12-01), Liou et al.
patent: 6040243 (2000-03-01), Li et al.
patent: 6734036 (2004-05-01), Chakrabarti et al.
patent: 6975033 (2005-12-01), Ito et al.
patent: 05-029480 (1993-02-01), None
patent: 11-297693 (1999-10-01), None
patent: 2002-222859 (2002-08-01), None
Christos D. Dimitrakopoulos and Patrick R. L. Malenfant; Organic Thin Film Transistors for Large Area Electronics; Advanced Materials; vol. 14, No. 2; 2002; p. 99-117.
Japanese Office Action issued on Apr. 28, 2009 corresponding to JP Patent Application No. 2007-116372.

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