Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure
Reexamination Certificate
2007-02-07
2009-06-16
Gurley, Lynne A. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
C257S588000, C257S621000, C257SE29174, C257SE29183
Reexamination Certificate
active
07547958
ABSTRACT:
The present invention provides a technology that makes it possible to enhance the gain and the efficiency of an RF bipolar transistor. Device isolation is given between a p+ type isolation region and an n+ type collector embedded region and between a p+ type isolation region and an n type collector region (an n+ type collector extraction region) with an isolation section that surrounds the collector extraction region in a plan view and is formed by embedding a dielectric film in a groove penetrating an isolation section, a collector region, and a collector embedded region and reaching a substrate. Further, a current route is formed between an emitter wiring (a wiring) and the substrate with an electrically conductive layer formed by embedding the electrically conductive layer in a groove penetrating a dielectric film, silicon oxide films, a semiconductor region, and the isolation regions and reaching the substrate, and thereby the impedance between the emitter wiring and the substrate is reduced.
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Gurley Lynne A.
Lam Cathy N
Miles & Stockbridge P.C.
Renesas Technology Corp.
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