Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-01-19
2010-10-26
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S529000, C257SE23149
Reexamination Certificate
active
07821134
ABSTRACT:
A semiconductor device includes a lower pad layer, an insulating layer and an upper pad layer. The lower pad layer is provided on a semiconductor substrate. The insulating layer is away from a surrounding of the lower pad layer so that a space having a recess on a surface between the lower pad layer and the insulating layer is formed. The upper pad layer covers over the lower pad layer and the space, extends to an upper face of the insulating layer, and has an area larger than that of the lower pad layer.
REFERENCES:
patent: 6323528 (2001-11-01), Yamazaki et al.
patent: 6836010 (2004-12-01), Saeki
patent: 6870265 (2005-03-01), Kurimoto et al.
patent: 6977442 (2005-12-01), Akagawa et al.
patent: 2001/0039113 (2001-11-01), Blalock et al.
patent: 2002/0090786 (2002-07-01), Kim et al.
patent: 2004/0183155 (2004-09-01), Seto et al.
patent: 2005/0130388 (2005-06-01), Suh
patent: 2005/0142841 (2005-06-01), Lee
patent: 2005/0212130 (2005-09-01), Imai
patent: 2006/0009023 (2006-01-01), Nair et al.
patent: 2007/0246828 (2007-10-01), Nakatani
patent: 197 45 575 (1998-04-01), None
patent: 0 104 079 (1984-03-01), None
patent: 9-205096 (1997-08-01), None
patent: I247373 (2006-01-01), None
patent: I248148 (2006-01-01), None
patent: I248654 (2006-02-01), None
European Search Report dated Jul. 12, 2007.
Taiwanese Notice of Allowance dated Jun. 4, 2010 with a Search Report (with partial English translation).
Emori Masaomi
Iwagami Norikazu
Eudyna Devices Inc.
Green Telly D
Kratz Quintos & Hanson, LLP
Wilczewski Mary
LandOfFree
Semiconductor device, electronic device and fabrication... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device, electronic device and fabrication..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device, electronic device and fabrication... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4233011