Semiconductor device electrode method

Details Semiconductor device electrode method Semiconductor device electrode method

1990-12-24

1991-06-25

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437228, 437239, 437162, 437 34, H01L 21283

Patent

active

050266659

ABSTRACT:
A method of fabricating electrodes comprises providing a semiconductor structure having doped tubs and forming a first dielectric layer of a first dielectric material thereon. A second dielectric layer of a second dielectric material is formed on the first dielectric layer and openings are formed in the second dielectric layer that extend to the first dielectric layer. A conformal semiconductor layer is formed over the entire semiconductor structure and nitride spacers are then formed in the openings on the conformal semiconductor layer. The conformal semiconductor layer is then oxidized so that only semiconductor slivers remain beneath the spacers. The spacers and the semiconductor slivers are removed as well as the portions of the first dielectric layer disposed therebeneath. Conductive electrodes which are coupled to the doped tubs are then formed in the openings.

REFERENCES:
patent: 4654958 (1987-04-01), Baerg et al.
patent: 4659428 (1987-04-01), Maas et al.
patent: 4845046 (1989-07-01), Shimbo
patent: 4910165 (1990-03-01), Lee et al.

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