Semiconductor device electrode

Details Semiconductor device electrode Semiconductor device electrode

1995-09-22

1997-12-02

Bell, Bruce F.

Fishing, trapping, and vermin destroying

437189, 437192, 437193, 437200, 204290R, H01L 2144

Patent

active

056935609

ABSTRACT:
An electrode of a semiconductor device includes an oxygen absorbing layer disposed on a surface of a semiconductor layer and a refractory metal layer disposed on the oxygen absorbing layer. Oxygen of a spontaneous oxide film on the semiconductor layer is taken to the oxygen absorbing layer, preventing the formation of interface levels within an interface metamorphic layer, preventing I.sub.d drifting.

REFERENCES:
patent: 5422307 (1995-06-01), Ishii
patent: 5496748 (1996-03-01), Hattori et al.

Affiliated with

Also associated with

Rating

Semiconductor device electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-800912