Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-12-24
1983-09-13
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 29579, 148 15, 357 15, 357 22, H01L 21265, H01L 21302
Patent
active
044033966
ABSTRACT:
A method for fabricating a gate-source structure for a recessed-gate static induction transistor. Source impurities are implanted prior to forming the recessed gates. The recessed gates are formed by a first isotropic etching step and a second anisotropic etching step which results in a unique overhanging protective layer used to protect the walls of the grooves during implantation of gate impurities in the bottom of the grooves. Implantations are driven and activated to form gate and source regions, the protective layer is removed and metal deposited to form electrodes. The procedure minimizes the required number of masking steps and associated mask registration problems.
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"High-Frequency High-Power Static Induction Transistor", Nishizawa et al., IEEE Transactions on Electron Devices, vol. Ed-25, No. 3, Mar. 1978, 9 pp.
"Recessed Gate Junction Field Effect Transistors", Baliga, International Electron Devices Meeting, IEEE, Dec. 8-9-10, 1980, Wash. D. C., 3 pp.
GTE Laboratories Incorporated
Lindgren Theodore D.
Rutledge L. Dewayne
Yeo J. Stephen
Zimmerman J. J.
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