Semiconductor device, cutting equipment for cutting...

Details Semiconductor device, cutting equipment for cutting... Semiconductor device, cutting equipment for cutting...

2007-04-03

2007-04-03

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

By electromagnetic irradiation

C438S460000, C438S462000

Reexamination Certificate

active

10952782

ABSTRACT:
A method for cutting a semiconductor device is provided. The device includes a first semiconductor layer, an insulation layer, and a second semiconductor layer. The method includes the steps of: forming a semiconductor part in the first semiconductor layer; irradiating a laser beam on a surface of the first semiconductor layer; and cutting the device into a semiconductor chip by using the laser beam. The laser beam is reflected at an interface so that a first reflected beam is generated, and the laser beam is reflected at another interface so that a second reflected beam is generated. The insulation film has a thickness, which is determined to weaken the first and second reflected beams each other.

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Notice of Preliminary Rejection issued from Korean Patent Office issued on Jan. 11, 2006 for the corresponding Korean patent application No. 10-2004-0077998 (a copy and English translation thereof).
First Office Action from Chinese Patent Office issued on Jun. 30, 2006 for the corresponding Chinese patent application No. 200410084958.X (a copy and English translation thereof).
Notice of Final Rejection from Korean Patent Office issued on Aug. 3, 2006 for the corresponding Korean patent application No. 10-2004-0077998 (a copy and English translation thereof).

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