Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1996-02-06
1998-11-24
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257133, 257137, 257139, H01L 2974
Patent
active
058411550
ABSTRACT:
A method of manufacturing a joined-type semiconductor device having a gate structure. The semiconductor device includes a first and second semiconductor substrates each having a substrate body, and a first and a second main surfaces which are opposite to each other. A gate structure is formed in the first main surface of the first substrate. A highly-doped semiconductor layer is formed in the first main surface of the second substrate and has an impurity-concentration which is higher than that of the substrate body of the second substrate. The first main surfaces of the two substrates are joined with each other, by subjecting the two substrates to a heat treatment so that impurities in the highly-doped semiconductor layer of the second substrate are driven into the surface region of the first substrate, and a diffusion layer is thereby formed in the first main surface of the first substrate.
REFERENCES:
patent: 5313092 (1994-05-01), Tsuruta et al.
patent: 5493134 (1996-02-01), Mehrotra et al.
patent: 5591991 (1997-01-01), Terasawa
Mitlehner et al., "A Novel 8 KV Light-Triggered Thyristor With Overvoltage Self Protection," 1990, pp. 289-294.
Baliga, "Modern Power Devices," 1987, pp. 350-353.
Amato et al., "Comparison of Lateral and Vertical DMOS Specific On-Resistance," 1985, pp. 736-739.
Adler et al., "The Evolution of Power Device Technology," 1984, pp. 1570-1591.
Ishidoh et al., "Advanced High Frequency GTO," 1988, pp. 189-194.
Nishizawa et al., "Analysis of Characteristic of Static Induction Thyristor," 1981, p. 31-38.
Nishizawa et al., "Effects of Gate Structure on Static Induction Thyristor," 1980, pp. 658-661.
Nishizawa et al., "Static Induction Thyristor," 1978, pp. 725-728.
Nishizawa et al., "Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)," 1975, pp. 185-197.
Nikkei Electronics, 1971, pp. 50-61.
Chaudhuri Olik
NGK Insulators Ltd.
Wille Douglas E.
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