Semiconductor device containing Si, O and N anti-reflective laye

Details Semiconductor device containing Si, O and N anti-reflective laye Semiconductor device containing Si, O and N anti-reflective laye

1997-03-19

1997-12-16

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Imaged product

Multilayer

4302721, 4302751, 4302761, 430510, 430512, 430524, 430525, 430950, 257629, G03C 1825, G03F 709

Patent

active

056983522

ABSTRACT:
A method of determining an optimum condition of an anti-reflective layer upon forming a resist pattern by exposure with a monochromatic light, forms the anti-reflective layer with these conditions and forms a resist pattern using a novel anti-reflective layer. The method comprises (I) forming an equi-contour line for the amount of absorbed light regarding a photoresist of an optional film thickness using the optical condition of the anti-reflective layer as a parameter, (II) conducting the same procedure as in (I) above for a plurality of resist film thicknesses, (III) finding a common region for the amount of absorbed light with respect to each of the traces obtained, thereby determining the optical condition for the anti-reflective layer, (IV) applying same procedures as described above while changing the condition of the anti-reflective layer, thereby determining the optical condition for the anti-reflective layer, and (V) determining the optimum optical condition such as the kind and the thickness of the anti-reflective layer under a certain condition of the anti-reflective layer.

REFERENCES:
patent: 4407927 (1983-10-01), Kamoshida et al.
patent: 5077185 (1991-12-01), Cho et al.
patent: 5362598 (1994-11-01), Takeyama et al.
patent: 5472827 (1995-12-01), Ogawa et al.
patent: 5472829 (1995-12-01), Ogawa
patent: 5641607 (1997-06-01), Ogawa et al.
patent: 5648202 (1997-07-01), Ogawa et al.

Affiliated with

Also associated with

Rating

Semiconductor device containing Si, O and N anti-reflective laye does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device containing Si, O and N anti-reflective laye, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device containing Si, O and N anti-reflective laye will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-204138