Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-12-24
1998-11-10
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 69, 257328, 257368, H01L 2976
Patent
active
058347984
ABSTRACT:
A semiconductor device is disclosed including a first insulating film having a contact hole and being formed on a substrate. A first impurity region is formed in the active layer on the bottom of the contact hole, and a second impurity region is formed in the active layer on the first insulating film outside the contact hole. In addition, a semiconductor region is formed in the active layer on the sidewall of the contact hole, and a second insulating film is formed on the first impurity region in the contact hole. A gate electrode is formed on the second insulating film.
REFERENCES:
patent: 5229310 (1993-07-01), Sivan
patent: 5241193 (1993-08-01), Pfiester et al.
patent: 5349205 (1994-09-01), Kobayashi et al.
C.T. Liu, et al., High Reliability and High Performance O.35.mu.m Gate-Inverted TFT's for 16Mbit SRAM Applications Using Self-Aligned LDD Structures, IEEE, pp.32.7.1 -327.7.4, 1992.
Chaudhuri Olik
LG Semicon Co. Ltd.
Wille Douglas A.
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