Semiconductor device containing microcrystalline germanium & met

Details Semiconductor device containing microcrystalline germanium & met Semiconductor device containing microcrystalline germanium & met

1995-06-12

1997-02-04

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

257 53, 257 55, 257 64, 257 65, 427562, 427563, 427568, 427575, 427578, 437 4, 437109, H01L 3104, H01L 3120, H01L 31075, H01L 310368

Patent

active

055994032

ABSTRACT:
The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deterioration is reduced, the field durability enhanced, and the temperature characteristic improved, a p-layer composed of amorphous silicon type semiconductor containing hydrogen, an i-layer composed of amorphous silicon-germanium type semiconductor containing hydrogen and further including microcrystalline germanium, and an n-layer composed of amorphous silicon type semiconductor containing hydrogen are laminated on a substrate, the i-layer being formed at a substrate temperature from 400.degree. to 600.degree. C. by microwave plasma CVD, the particle diameter of said microcrystalline germanium ranging from 50 to 500 angstroms. Also, the content of microcrystalline germanium varies in the layer thickness direction.

REFERENCES:
patent: 4689093 (1987-08-01), Ishihara et al.
patent: 4706376 (1987-11-01), Yamazaki et al.
patent: 4766008 (1988-08-01), Kodato
patent: 4801468 (1989-01-01), Ishihara et al.
patent: 4818563 (1989-04-01), Ishihara et al.

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