Semiconductor device containing charge pump type step-up...

Details Semiconductor device containing charge pump type step-up... Semiconductor device containing charge pump type step-up...

2007-02-13

2007-02-13

Vu, Bao Q. (Department: 2838)

Electric power conversion systems

Current conversion

With voltage multiplication means

C327S536000, C327S537000

Reexamination Certificate

active

11478642

ABSTRACT:
A semiconductor device includes a first conductivity type semiconductor substrate, and a charge pump type step-up circuit formed in the semiconductor substrate. The step-up circuit includes a charge pump circuit and a bipolar transistor. The charge pump circuit has an input line to which a power supply voltage is to be applied, and an output line through which an output voltage is to be output. The bipolar transistor is formed in the semiconductor substrate so as to be provided between the input line and the output line. The bipolar transistor is constituted so as to be turned ON when an absolute value of the output voltage is lower than an absolute value of the power supply voltage, and so as to be turned OFF when the absolute value of the output voltage is higher than the absolute value of the power supply voltage.

REFERENCES:
patent: 6535052 (2003-03-01), Myono
patent: 6801033 (2004-10-01), Sudo et al.
patent: 6862201 (2005-03-01), Hodge, Jr.
patent: 9-191571 (1997-07-01), None

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