Semiconductor device containing bipolar transistor formed by met

Details Semiconductor device containing bipolar transistor formed by met Semiconductor device containing bipolar transistor formed by met

1985-10-23

1987-10-20

Chaudhuri, Olik

Electrical connectors

With selectable circuit, e.g., plug board

Test panel

148DIG10, 148DIG11, 357 34, 437 31, 437229, H01L 2972, H01L 21473, H01L 2174

Patent

active

047004568

ABSTRACT:
For a semiconductor device including a bipolar transistor, the emitter, a heavily doped base region surrounding the emitter, and base and collector contact regions, (the collector including a buried layer at an epitaxial layer/substrate interface of the semiconductor body), are formed by employing, on the epitaxial layer, layers of first and second resists, each resist layer comprising an impurity barrier, the second resist being attacked by an etchant relatively inactive with the first resist, by first or second photolithographic steps, of a sequence of only three photolithographic steps, forming three apertures in a first resist layer, to expose the subsequent emitter and two contact regions, then before each, or the, remaining photolithographic step of the sequence, providing a second resist layer, and exposing selectively, and coarsely through the second resist, the subsequent emitter, and either the collector contact region by the third photolithographic step, or the base contact region by the second photolithographic step.

REFERENCES:
patent: 3948694 (1976-04-01), Mills, III
patent: 4372030 (1983-02-01), Saitoh
patent: 4498227 (1985-02-01), Howell et al.
patent: 4551911 (1985-11-01), Sasaki et al.
patent: 4577397 (1986-03-01), Komatsu et al.
patent: 4616405 (1986-10-01), Yasuoka

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