Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-12-09
2000-02-22
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257774, H01L 29786, H01L 2941
Patent
active
060283254
ABSTRACT:
An aluminum pattern is formed at the same time as a gate electrode, and anodic oxide films are formed on the surfaces of the aluminum pattern and the gate electrode. After an interlayer insulating film is formed, a contact hole is formed through it. Even if the contact hole is deviated from the intended position, there occurs no failure because of the existence of the aluminum pattern on which the anodic oxide film is formed.
REFERENCES:
patent: 5289030 (1994-02-01), Yamazaki et al.
Guay John
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device contact registration structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device contact registration structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device contact registration structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-522517