Semiconductor device constituting bipolar transistor

Details Semiconductor device constituting bipolar transistor Semiconductor device constituting bipolar transistor

1989-09-25

1991-02-19

James, Andrew J.

357 13, 357 36, 357 46, H01L 2972, H01L 2702, H01L 2990

Patent

active

049948806

ABSTRACT:
Base regions of first and second stage transistors are formed in a semiconductor substrate consisting of low and high resistivity collector layers, and emitter regions are formed in the respective base regions. The emitter region of the second stage transistor has an interdigital structure with a plurality of finger portions, and an emitter surface electrode is formed on the emitter region of the second stage transistor. The second stage transistor emitter surface electrode has an extending portion at a position spaced apart from a transistor operation region where the finger portions are formed. An emitter connection electrode is formed on the extending portion, and a lead is connected by soldering or the like to the emitter connection electrode. In a portion of the emitter surface electrode extending from the emitter connection electrode to the transistor operation region, slits are formed such that they are bypassed by emitter current so that the lead resistance from each finger portion to the emitter connection electrode is substantially uniform.

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H. W. Mittenentzei, "Konstruktion und Eigenschaften Hochsperrender Si-(Leistungsschalttransistoren", Radio Fernsehen Elektronik, vol. 34, No. 9, Sep. 1985, pp. 560-563.

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