Semiconductor device consisting of a semiconductor material havi

Details Semiconductor device consisting of a semiconductor material havi Semiconductor device consisting of a semiconductor material havi

1996-03-20

1997-09-23

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257 28, 257657, H01L 310312

Patent

active

056707967

ABSTRACT:
A semiconductor device has a structure in which doped layers and undoped layers are alternately stacked and is constituted by (a) a semi-insulating substrate, (b) undoped layers consisting of a substantially undoped diamond material, and (c) thin doped layers formed between the undoped layers and consisting of a diamond material doped with B as an impurity. Stable operation characteristics can be obtained within a temperature range from room temperature to a high temperature while a semiconductor material having a deep impurity level is used.

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Patent Abstracts of Japan, vol. 15, No. 82 of JP-A-02 299273, published Dec. 11, 1990.
Shiomi et al., "High-Voltage Schottky Diodes on Boron-Doped Diamond Epitaxial Films", Japanese Journal of Applied Physics, vol. 29, No. 12 (Dec. 1, 1990), pp. L2163-L2164.
Kobayashi et al., "Analytical studies on multiple delta doping in diamond thin films for efficient hole excitation and conductivity enhancement", Journal of Applied Physics, vol. 76, No. 3 (Aug. 1, 1994), pp. 1977-1979.

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