Semiconductor device configured for reducing...

Details Semiconductor device configured for reducing... Semiconductor device configured for reducing...

2007-05-08

2007-05-08

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Making plural separate devices

C257SE21705

Reexamination Certificate

active

10773614

ABSTRACT:
A semiconductor device includes an IC die configured to reduce post-fabrication damage to the device. The IC die is formed such that at least a portion of one or more perimeter edges of the die are beveled by an etching process. The semiconductor device may include a plurality of IC dies, at least one of the IC dies being separated from the semiconductor device by forming one or more v-shaped grooves in an upper surface of the device, the v-shaped grooves defining perimeter edges of the at least one IC die. A back surface of the semiconductor device is removed until at least a portion of the v-shaped grooves are exposed. When the IC die is separated from the semiconductor device in this manner, a sidewall of each of the v-shaped grooves forms a beveled perimeter edge of the separated IC die.

REFERENCES:
patent: 4961821 (1990-10-01), Drake et al.
patent: 5516125 (1996-05-01), McKenna
patent: 6271102 (2001-08-01), Brouillette et al.
patent: 2003/0025183 (2003-02-01), Thornton et al.
patent: 2003/0122238 (2003-07-01), Wu et al.

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