Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – Avalanche diode
Reexamination Certificate
2006-03-28
2006-03-28
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
Avalanche diode
C257S299000, C257S305000, C257S322000, C257S339000, C257S345000, C257S349000, C257S354000, C257S375000, C257S395000, C257S398000, C257S399000, C257S400000, C257S403000, C257S404000, C257S409000, C257S499000, C257S500000, C257S501000, C257S506000, C257S519000, C257S524000
Reexamination Certificate
active
07019379
ABSTRACT:
A semiconductor device includes a heavily doped layer25of p-type formed in the surface of an n-type well21,an intermediately doped layer26of p-type formed to adjoin and surround the heavily p-doped layer25,and an isolation region22formed to surround the heavily p-doped layer25and the intermediately p-doped layer26.The heavily p-doped layer25has a higher dopant concentration than the well21.The intermediately p-doped layer26has a higher dopant concentration than the well21and a lower dopant concentration than the heavily p-doped layer25.
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