Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Reexamination Certificate
2004-08-18
2009-10-06
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
C257S390000, C257S393000, C257S401000
Reexamination Certificate
active
07598541
ABSTRACT:
A semiconductor device has transistors (P1,P10,P11) formed in an active region (22) isolated by a trench isolation region, and a predetermined circuit including a first and second transistors (P10,P11) that require symmetry or relativity characteristics, wherein the distances (S1) between a gate electrode and one end of the active region on a source side viewed from the gate electrode in the first and second transistor are substantially same, and the distances (D1) between a gate electrode and one end of the active region on a drain side viewed from the gate electrode in the first and second transistor are substantially same. The predetermined circuit includes, for example, a current mirror circuit that has a transistor pair of which gate is commonly connected, and a differential circuit that has a transistor pair whose sources are commonly connected, where an input signal is supplied to the gate, and an output signal is generated in the drain.
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Japanese Office Action mailed Jul. 22, 2008, issued in corresponding Japanese Application No. 2004-051832.
Okamoto Atsushi
Takaramoto Toshiharu
Fujitsu Microelectronics Limited
Rao Steven H
Weiss Howard
Westerman, Hattori, Daniels & Adrian , LLP.
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